Investigation of surface properties of treated ITO substrates for organic light-emitting devices
Identifieur interne : 000992 ( Main/Repository ); précédent : 000991; suivant : 000993Investigation of surface properties of treated ITO substrates for organic light-emitting devices
Auteurs : RBID : Pascal:13-0270044Descripteurs français
- Pascal (Inist)
- Propriété surface, Addition étain, Electronique organique, Dispositif luminescent, Diode électroluminescente, Couche ITO, Nettoyage, Ultrason, Température ambiante, Eau distillée, Microstructure, Morphologie, Surface contact, Angle contact, Energie surface, Rugosité, Microscopie force atomique, Oxyde d'indium, Peroxyde d'hydrogène, Matériau dopé, 8560J, 6865, 6837P, ITO, H2O2.
English descriptors
- KwdEn :
- Atomic force microscopy, Cleaning, Contact angle, Contact surface, Distilled water, Doped materials, Hydrogen peroxide, ITO layers, Indium oxide, Light emitting device, Light emitting diode, Microstructure, Morphology, Organic electronics, Room temperature, Roughness, Surface energy, Surface properties, Tin addition, Ultrasound.
Abstract
In this work, a study of the surface properties of treated indium tin oxide (ITO) substrates is reported. We used three different cleaning treatments among others: washing in an ultrasonic bath of acetone and ethyl alcohol or isopropyl alcohol in room temperature as well as dipping into solution (prepared from NH4OH (25 %), H2O2 (30 %) and distilled water) at 60 °C. The relation between ITO morphology and surface properties has been studied by contact angle, and surface energy measurements as well as the surface roughness of ITO samples evaluation by atomic force microscopy (AFM). Experimental results show that the ITO surface properties are closely related to the treatment methods. The ultrasonic degreasing in acetone and ethyl alcohol yields the highest surface energy (38.5 mJ/m2), brings about the maximum reduction in contact angles and causes the smallest increasing the surface roughness of ITO substrates.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Investigation of surface properties of treated ITO substrates for organic light-emitting devices</title><author><name sortKey="Arazna, Aneta" uniqKey="Arazna A">Aneta Arazna</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tele and Radio Research Institute, Ratuszowa 11 Str.</s1><s2>03-450 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>03-450 Warsaw</wicri:noRegion></affiliation></author><author><name sortKey="Kozio, Grazyna" uniqKey="Kozio G">Grazyna Kozio</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tele and Radio Research Institute, Ratuszowa 11 Str.</s1><s2>03-450 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>03-450 Warsaw</wicri:noRegion></affiliation></author><author><name sortKey="Janeczek, Kamil" uniqKey="Janeczek K">Kamil Janeczek</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tele and Radio Research Institute, Ratuszowa 11 Str.</s1><s2>03-450 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>03-450 Warsaw</wicri:noRegion></affiliation></author><author><name sortKey="Futera, Konrad" uniqKey="Futera K">Konrad Futera</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tele and Radio Research Institute, Ratuszowa 11 Str.</s1><s2>03-450 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>03-450 Warsaw</wicri:noRegion></affiliation></author><author><name sortKey="Steplewski, Wojciech" uniqKey="Steplewski W">Wojciech Steplewski</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tele and Radio Research Institute, Ratuszowa 11 Str.</s1><s2>03-450 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>03-450 Warsaw</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0270044</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0270044 INIST</idno><idno type="RBID">Pascal:13-0270044</idno><idno type="wicri:Area/Main/Corpus">000934</idno><idno type="wicri:Area/Main/Repository">000992</idno></publicationStmt><seriesStmt><idno type="ISSN">0957-4522</idno><title level="j" type="abbreviated">J. mater. sci., Mater. electron.</title><title level="j" type="main">Journal of materials science. Materials in electronics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Cleaning</term><term>Contact angle</term><term>Contact surface</term><term>Distilled water</term><term>Doped materials</term><term>Hydrogen peroxide</term><term>ITO layers</term><term>Indium oxide</term><term>Light emitting device</term><term>Light emitting diode</term><term>Microstructure</term><term>Morphology</term><term>Organic electronics</term><term>Room temperature</term><term>Roughness</term><term>Surface energy</term><term>Surface properties</term><term>Tin addition</term><term>Ultrasound</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Propriété surface</term><term>Addition étain</term><term>Electronique organique</term><term>Dispositif luminescent</term><term>Diode électroluminescente</term><term>Couche ITO</term><term>Nettoyage</term><term>Ultrason</term><term>Température ambiante</term><term>Eau distillée</term><term>Microstructure</term><term>Morphologie</term><term>Surface contact</term><term>Angle contact</term><term>Energie surface</term><term>Rugosité</term><term>Microscopie force atomique</term><term>Oxyde d'indium</term><term>Peroxyde d'hydrogène</term><term>Matériau dopé</term><term>8560J</term><term>6865</term><term>6837P</term><term>ITO</term><term>H2O2</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this work, a study of the surface properties of treated indium tin oxide (ITO) substrates is reported. We used three different cleaning treatments among others: washing in an ultrasonic bath of acetone and ethyl alcohol or isopropyl alcohol in room temperature as well as dipping into solution (prepared from NH<sub>4</sub>OH (25 %), H<sub>2</sub>O<sub>2</sub> (30 %) and distilled water) at 60 °C. The relation between ITO morphology and surface properties has been studied by contact angle, and surface energy measurements as well as the surface roughness of ITO samples evaluation by atomic force microscopy (AFM). Experimental results show that the ITO surface properties are closely related to the treatment methods. The ultrasonic degreasing in acetone and ethyl alcohol yields the highest surface energy (38.5 mJ/m<sup>2</sup>), brings about the maximum reduction in contact angles and causes the smallest increasing the surface roughness of ITO substrates.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0957-4522</s0></fA01><fA03 i2="1"><s0>J. mater. sci., Mater. electron.</s0></fA03><fA05><s2>24</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Investigation of surface properties of treated ITO substrates for organic light-emitting devices</s1></fA08><fA11 i1="01" i2="1"><s1>ARAZNA (Aneta)</s1></fA11><fA11 i1="02" i2="1"><s1>KOZIOŁ (Grazyna)</s1></fA11><fA11 i1="03" i2="1"><s1>JANECZEK (Kamil)</s1></fA11><fA11 i1="04" i2="1"><s1>FUTERA (Konrad)</s1></fA11><fA11 i1="05" i2="1"><s1>STEPLEWSKI (Wojciech)</s1></fA11><fA14 i1="01"><s1>Tele and Radio Research Institute, Ratuszowa 11 Str.</s1><s2>03-450 Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>267-271</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22352</s2><s5>354000503651550370</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>12 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0270044</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of materials science. Materials in electronics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>In this work, a study of the surface properties of treated indium tin oxide (ITO) substrates is reported. We used three different cleaning treatments among others: washing in an ultrasonic bath of acetone and ethyl alcohol or isopropyl alcohol in room temperature as well as dipping into solution (prepared from NH<sub>4</sub>OH (25 %), H<sub>2</sub>O<sub>2</sub> (30 %) and distilled water) at 60 °C. The relation between ITO morphology and surface properties has been studied by contact angle, and surface energy measurements as well as the surface roughness of ITO samples evaluation by atomic force microscopy (AFM). Experimental results show that the ITO surface properties are closely related to the treatment methods. The ultrasonic degreasing in acetone and ethyl alcohol yields the highest surface energy (38.5 mJ/m<sup>2</sup>), brings about the maximum reduction in contact angles and causes the smallest increasing the surface roughness of ITO substrates.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03C</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="03" i2="3"><s0>001B60H65</s0></fC02><fC02 i1="04" i2="3"><s0>001B60A16C</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Propriété surface</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Surface properties</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Propiedad superficie</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Addition étain</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Tin addition</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Adición estaño</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Electronique organique</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Organic 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